2SD1976 Datasheet | Hitachi Semiconductor

Feature - Built-in High voltage zener diode (300 V) - High Speed switching Outline TO-220AB 1 1. Base 2. Collector (Flange) 3. Emitter ID 1.6 kΩ (Typ) 160 Ω (Typ) 3 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Diode current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC ID- Rating 300 300 7 6 6 10 40 150 - 55 to +150 Unit V V V A A A W °C °C I C(peak) PC - Tj Tstg Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Emitter to collector diode forward voltage Turn on time Storage time Fall time Symbol V(BR)CBO VCEO(SUS) V(BR)EBO I CEO h FE VCE(sat) VBE(sat) VECF t on t stg tf Min 300 300 7 - 500 - - - - - - Typ - - - - - - - - 1.2 8.0 8.0 - Max 420 - - 100 - 1.5 2.0 3.5 - V V V µs Unit V V V µA Test conditions I C = 0.1 m A, IE = 0 I C = 3 A, RBE = ∞, L = 10 m H I E = 50 m A, IC = 0 VCE = 300 V, RBE = ∞ VCE = 2 V, IC = 4 A I C = 4 A, IB = 40 m A I C = 4 A, IB = 40 m A IF = 6 A I C = 4 A, VCC = 20 V I B1 = - IB2 = 40 m A Maximum Collector Dissipation Curve 60 Collector power dissipation PC (W) 20 10 Collector current IC (A) Area of Safe Operation i C(peak) ot 1 sh 0 µs t sho = 50 s1 PW t °C) 1m = 25 sho 1 n(T C ms ratio 10 Ope DC 5 IC(max) 2 1.0 0.5 0.2 0.1 0.05 0.02 Ta = 25°C 50 100 Case temperature TC...