2SD1976 - NPN Transistor

Inchange Semiconductor

General Description

Fast Switching Speed High DC Current Gain Built-in high voltage zener diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage switching Igniter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT

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Datasheet Details

Part number	2SD1976
Manufacturer	Inchange Semiconductor
File Size	185.55 KB
Description	NPN Transistor
Datasheet	2SD1976 Datasheet

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1976 DESCRIPTION ·Fast Switching Speed ·High DC Current Gain ·Built-in high voltage zener diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage switching ·Igniter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 6 A 10 A 40 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.