2SD1976 datasheet by Inchange Semiconductor.
| Part number | 2SD1976 |
|---|---|
| Datasheet | 2SD1976-INCHANGE.pdf |
| File Size | 185.55 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
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1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1976 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD1976 | Silicon NPN Transistor | Hitachi Semiconductor |
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