2SD1976
DESCRIPTION
- Fast Switching Speed
- High DC Current Gain
- Built-in high voltage zener diode
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- High voltage switching
- Igniter
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation @ TC=25℃
Junction Temperature
Tstg
Storage Temperature Range
℃
-55~150
℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise...
