2SD1975 Overview
·Good Linearity of hFE ·Wide Area of Safe Operation ·High DC Current-Gain Bandwidth Product ·plement to Type 2SB1317 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power amplification ·Optimum for the output stage of a Hi-Fi audio amplifier. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1975 TC=25℃ unless otherwise specified SYMBOL...
