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2SD1975 - NPN Transistor

Datasheet Summary

Description

Good Linearity of hFE Wide Area of Safe Operation High DC Current-Gain Bandwidth Product Complement to Type 2SB1317 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power amplification Optimum for the output stage

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Datasheet Details

Part number 2SD1975
Manufacturer INCHANGE
File Size 212.10 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor 2SD1975 DESCRIPTION ·Good Linearity of hFE ·Wide Area of Safe Operation ·High DC Current-Gain Bandwidth Product ·Complement to Type 2SB1317 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power amplification ·Optimum for the output stage of a Hi-Fi audio amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 25 A 3.5 W 150 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
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