Download 2SD1975 Datasheet PDF
Inchange Semiconductor
2SD1975
DESCRIPTION - Good Linearity of h FE - Wide Area of Safe Operation - High DC Current-Gain Bandwidth Product - plement to Type 2SB1317 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - High power amplification - Optimum for the output stage of a Hi-Fi audio amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ Junction Temperature 3.5 W ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:.iscsemi....