2SD1978
2SD1978 is Silicon NPN Transistor manufactured by Hitachi Semiconductor.
Silicon NPN Epitaxial, Darlington
Application
- Low frequency power amplifier
- plementary pair with 2SB1387
Outline
TO-92MOD
ID 2 kΩ (Typ) 0.5 kΩ (Typ) 1
1. Emitter 2. Collector 3. Base 3 2 1
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature E to C diode forward current Symbol VCBO VCEO VEBO IC ic (peak) PC Tj Tstg ID Ratings 120 120 7 1.5 3.0 0.9 150
- 55 to +150 1.5 Unit V V V A A W °C °C A
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 120 120 7
- - 2000
- -
- -
- Typ
- -
- -
- -
- -
- -
- Max
- -
- 1.0 10 30000 1.5 2.0 2.0 2.5 3.0 V V V V V Unit V V V µA µA Test conditions I C = 0.1 m A, IE = 0 I C = 10 m A, RBE = ∞ I E = 50 m A, IC = 0 VCB = 100 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 1 A- 1 I C = 1 A, IB = 1 m A- 1 I C = 1.5 A, IB = 1.5 m A- 1 I C = 1 A, IB = 1 m A- 1 I C = 1.5 A, IB = 1.5 m A- 1 I D = 1.5 A- 1
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage h FE VCE(sat)1 VCE(sat)2 Base to emitter saturation voltage VBE(sat)1 VBE(sat)2 E to C diode forward voltage Note: 1. Pulse test VD
Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC (W) Collector Current IC (A) Area of Safe Operation 10 i C(peak) 3 s 0µ 10
1 µs s s 1 m 10 m = PW
1.0 0.3 0.1 0.03 0.01 Ta = 25°C 1 Shot Pulse
100 150 50 Ambient Temperature Ta (°C)
30 100 300 10 Collector to Emitter Voltage VCE (V)
Typical Output Characteristics 2.0 Ta = 25°C
PC = 0
DC Current Transfer Ratio vs. Collector Current 30,000 DC Current Transfer Ratio h...
