2SD2019 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 3 1. Emitter 2. Collector 3. Base ID 15 kΩ (Typ) 0.5 kΩ (Typ) 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC - Tj Tstg ID- 1 1 Ratings 150 80 8 1.5 3 10 150 - 55 to +150 1.5 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 150 80 7 - - 2000 5000 1000 - - - Typ - - - - - - - - - - - Max - - - 5 5 - 30000 - 1.5 2.0 3.0 V V V Unit V V V µA µA Test conditions I C = 1 m A, IE = 0 I C = 10 m A, RBE = ∞ I E = 50 m A, IC = 0 VCB = 120 V, IE = 0 VCE = 65 V, RBE = ∞ VCE = 2 V, IC = 0.15 A- 1 VCE = 2 V, IC = 1 A- 1 VCE = 2 V, IC = 1.5 A- 1 I C = 1 A, IB = 1 m A- 1 I C = 1 A, IB = 1 m A- 1 I D = 1.5 A- 1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio h FE h FE h FE Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Note: 1. Pulse test. VCE(sat) VBE(sat) VD Maximum Collector Dissipation Curve 12 Collector power dissipation Pc (W) 10 i C (peak) Collector current IC (A) 3 1.0 0.3 0.1 0.03 0.01 0 50 100 Case temperature TC (°C) 150 1 Area of Safe Operation IC (max) s 0µ s s m 1 m 10 on = ati er ) PW Op 25°C DC = (T C Ta = 25°C 1 shot pulse 3 10 30 100 Collector to emitter voltage VCE (V) Transient Thermal Resistance 10 10 ms to 10 s Thermal resistance θj-c (°C/W) 2.0 180 3 Collector current IC (A) 1.6 Typical Output Characteristics...