2SD2046 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Outline TO-92MOD ID 2 kΩ (Typ) 0.5 Ω (Typ) 1 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature E to C diode forward current Symbol VCBO VEBO IC ic (peak) PC Tj Tstg ID Ratings 50 7 1.5 3.0 1.0 150 - 55 to +150 1.5 Unit V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage (Zener breakdown voltage) Symbol V(BR)CBO (Vz ) Min 50 Typ 60 Max 70 Unit V Test conditions I C = 0.1 m A, IE = ∞ Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage V(BR)EBO I CEO h FE VCE(sat)1 VCE(sat)2 Base to emitter saturation voltage VBE(sat)1 VBE(sat)2 E to C diode forward voltage Note: 1. Pulse test VD 50 7 - 2000 - - - - - - - - - - - - - - - - 10 10000 1.5 2.0 2.0 2.5 3.0 V V µA I C = 10 m A, RBE = ∞ I E = 50 m A, IC = 0 VCE = 40 V, RBE = ∞ VCE = 3 V, IC = 1 A- 1 I C = 1 A, IB = 1 m A- 1 I C = 1.5 A, IB = 1.5 m A- 1 I C = 1 A, IB = 1 m A- 1 I C = 1.5 A, IB = 1.5 m A- 1 I D = 1.5 A- 1 V V V V V Maximum Collector Dissipation Curve Collector Power Dissipation Pc (W) 1.2 Collector Current IC (A) Area of Safe Operation 10 i C (peak) 3 1 PW 1 µs 100 µs s s m 0m 1 = 1.0 0.3 0.1 0.03 0.01 Ta = 25°C 1 Shot Pulse 50 100 150 Ambient Temperature Ta (°C) 10 30 100 300 Collector to Emitter Voltage VCE (V) Typical Output Characteristics...