2SD2106 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-220FM 1 1. Base 2. Collector 3. Emitter ID 3 kΩ (Typ) 200 Ω (Typ) 3 12 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC - Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg Rating 120 120 7 6 10 2 25 150 - 55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 120 120 7 - - 1000 - - - - Typ - - - - - - - - - - Max - - - 10 10 20000 1.5 3.0 2.0 3.5 V V Unit V V V µA Test conditions I C = 0.1 m A, IE = 0 I C = 25 m A, RBE = ∞ I E = 50 m A, IC = 0 VCB = 100 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 3 A- 1 I C = 3 A, IB = 6 m A- 1 I C = 6 A, IB = 60 m A- 1 I C = 3 A, IB = 6 m A- 1 I C = 6 A, IB = 60 m A- 1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Note: 1. Pulse test. h FE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 Maximum Collector Dissipation Curve 30 Collector power dissipation Pc (W) 30 i C (peak) Collector current IC (A) 10 Area of Safe Operation 1µ s 3 1.0 IC (max) DC ( on ati er Op s 0µ 1m =...