2SD2107
2SD2107 is Silicon NPN Transistor manufactured by Hitachi Semiconductor.
Silicon NPN Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220FM
12 3
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC
- Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg
Rating 70 60 5 4 8 2 25 150
- 55 to +150
Unit V V V A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 70 60 5
- -
Typ
- -
- -
- -
- -
- -
Max
- -
- 10 10 200
Unit V V V µA
Test conditions I C = 10 µA, IE = 0 I C = 50 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 60 V, IE = 0 VCE = 50 V, RBE = ∞ VCE = 4 V, IC = 1 A- 1 VCE = 4 V, IC = 0.1 A- 1 VCE = 4 V, IC = 1 A- 1 I C = 2 A, IB = 0.2 A- 1 I C = 2 A, IB = 0.2 A- 1
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio h FE1- h FE2 Base to emitter voltage Collector to emitter saturation voltage Base to emitter saturation voltage VBE VCE(sat) VBE(sat)
60 35
- -
- 1.0 1.0 1.2
Notes: 1. Pulse test. 2. The 2SD2107 is grouped by h FE1 as follows. B 60 to 120 C 100 to 200
Maximum Collector Dissipation Curve 30 Collector power dissipation PC (W) 5 Collector current IC (A) 4 Typical Output Characteristics TC = 25°C 60
50 40...
