2SD2124L Datasheet | Hitachi Semiconductor

2SD2124(L)/(S) Silicon NPN Epitaxial Application Low frequency power amplifier Outline DPAK 4 4 1 2 3 12 1. Base 2. Collector 3. Emitter 4. Collector 2, 4 ID 6 kΩ (Typ) 0.5 kΩ (Typ) 3 S Type L Type 2SD2124(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC - Tj Tstg ID- 1 1 Ratings 120 120 7 1.5 3.0 18 150 - 55 to +150 1.5 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 120 120 7 - - 2000 - - - - - - - Typ - - - - - - - - - - - 0.5 2.0 Max - - - 10 10 30000 1.5 2.0 2.0 2.5 3.0 - - V µs µs V V Unit V V V µA Test conditions I C = 0.1 m A, IE = 0 I C = 10 m A, RBE = ∞ I E = 50 m A, IC = 0 VCB = 100 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 1 A- 1 I C = 1 A, IB = 1 m A- 1 I C = 1.5 A, IB = 1.5 m A- 1 I C = 1 A, IB = 1 m A- 1 I C = 1.5 A, IB = 1.5 m A- 1 I D = 1.5 A- 1 I C = 1 A, IB1 = - IB2 = 1 m A Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Turn on time Turn off time Note: 1. Pulse test. h FE VCE(sat) VCE(sat) VBE(sat) VBE(sat) VD t on t...