2SD2337 Datasheet | Hitachi Semiconductor

Silicon NPN Triple Diffused Application Low frequency high voltage power amplifier TV vertical deflection output plementary pair with 2SB1530 Outline TO-220FM 12 3 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC - Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg Ratings 200 150 6 2 5 1.5 20 150 - 45 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min 150 6 - 1 Typ - - - - - - - Max - - 1 320 - 3.0 1.0 Unit V V µA Test conditions I C = 50 m A, RBE = ∞ I E = 5 m A, IC = 0 VCB = 120 V, IE = 0 VCE = 4 V, IC = 50 m A VCE = 10 V, IC = 500 m A- 2 I C = 500 m A, IB = 50 m A- 2 VCE = 4 V, IC = 50 m A Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO h FE1- h FE2 Collector to emitter saturation voltage Base to emitter voltage VCE(sat) VBE 60 60 - - Notes: 1. The 2SD2337 is grouped by h FE1 as follows. 2. Pulse test. B 60 to 120 C 100 to 200 D 160 to 320 Maximum Collector Dissipation Curve 30 Collector power dissipation Pc (W) 10 5 20 Collector current IC (A) 2 1.0 0.5 0.2 0.1 150 0.05 (150 V, 65 m A) 2 5 10 20 50 100 200 Collector to emitter voltage VCE (V) IC (max) (Continuous) (15, 2 A) Area of Safe Operation TC n tio ra pe O (T C (60, 0.4 A) = °C 25 ) 1.5...