2SD768K Datasheet | Hitachi Semiconductor

2SD768(K) Silicon NPN Epitaxial Application Medium speed and power switching plementary pair with 2SB727(K) Outline TO-220AB 1 1. Base 2. Collector (Flange) 3. Emitter 2 3 3 kΩ (Typ) 200 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC - Tj Tstg Ratings 120 120 7 6 10 40 150 - 55 to +150 Unit V V V A A W °C °C 2SD768(K) Electrical Characteristics (Ta = 25°C) Item Symbol Min 120 7 - - 1000 - - - - - - Typ - - - - - - - - - 1.0 3.0 Max - - 100 10 20000 1.5 3 2 3.5 - - V V V V µs µs Unit V V µA µA Test conditions I C = 25 m A, RBE = ∞ I E = 50 m A, IC = 0 VCB = 120 V, IE = 0 VCE = 100 V, RBE=∞ VCE = 3 V, IC = 3 A- 1 I C = 3 A, IB = 6 m A- 1 I C = 6A, IB = 60 m A- 1 I C = 3 A, IB = 6 m A- 1 I C = 6 A, IB = 60 m A- 1 I C = 3 A, IB1 = - IB2 = 6 m A I C = 3 A, IB1 = - IB2 = 6 m A Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Turn off time Note: 1. Pulse test. h FE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 t on t off Maximum Collector Dissipation Curve 60 Collector power dissipation PC (W) 30 Collector current IC (A) 10 3 1.0 0.3 0.1 0.03 0 50 100 Case temperature TC (°C) 150 1 3 10 30 100 300 1,000 Collector to emitter voltage VCE (V) i C(peak) IC(max) 1 µs Area of Safe Operation 10 0µ 40 s PW...