2SJ130
2SJ130 is P-Channel MOSFET manufactured by Hitachi Semiconductor.
Features
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- Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators
Outline
DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S
2 3
2SJ130(L), 2SJ130(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch- Tch Tstg
Ratings
- 300 ±20
- 1
- 2
- 1 20 150
- 55 to +150
Unit V V A A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS
- 300 ±20
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- 2.0
- 0.25
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- Typ
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- 6.0 0.4 235 65 16 10 25 35 45
- 0.9 200 Max
- - ±10
- 100
- 4.0 8.5
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