2SJ244 Datasheet | Hitachi Semiconductor

Features - Very Low on-resistance - High speed switching - Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. Outline UPAK 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)- Pch- Tch Tstg 2 1 Ratings - 12 ±7 ±2 ±4 1 150 - 55 to +150 Unit V V A A W °C °C Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10% 2. Value on the alumina ceramic board (12.5×20×0.7 mm) 3. Marking is “JY”. Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source cutoff current Symbol Min V(BR)DSS V(BR)GSS I GSS - 12 ±7 - - - 0.4 - - - - - - - - - Typ - - - - - 0.65 0.5 1.8 130 50 260 365 1450 - Max - - ±5 - 1 - 1.4 0.9 - - - - - - - 7 Unit V V µA µA V Ω Ω S p F p F p F ns ns V I D = - 0.2 A- 1, Vin = - 4 V, RL = 51 Ω I F = 4 A- 1, VGS = 0 Test conditions I D = - 1 m A, VGS = 0 I G = ±10 µA, VDS = 0 VGS = ±6 V, VDS = 0 VDS = - 8 V, VGS = 0 I D = - 100 µA, VDS...