2SJ291
2SJ291 is Silicon P-Channel MOS FET manufactured by Hitachi Semiconductor.
Features
- -
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- - Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings
Outline
TO-220AB
3 1. Gate 2. Drain (Flange) 3. Source
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current
.. Avalanche current
Symbol VDSS VGSS ID ID(pulse)- IDR IAP-
3 1
Ratings
- 60 ±20
- 20
- 80
- 20
- 20
Unit V V A A A A m J W °C °C
Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω
EAR- Tch
Pch-
60 150
- 55 to +150
Tstg
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current
..
Symbol Min V(BR)DSS V(BR)GSS IGSS VGS(off) RDS(on)
- 60 ±20
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- 1.0
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Typ
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- -...
