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2SJ280 L , 2SJ280 S
Silicon P Channel MOS FET
Application
LDPAK
High speed power switching
4 4
Features
• • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC converter • Avalanche Ratings
1 1 2, 4 2 3 2 3
1
1. Gate 2. Drain 3. Source 4.