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2SJ290 - SILICON P-CHANNEL MOSFET

General Description

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Key Features

  • Low on.
  • resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source.
  • Suitable for Switching regulator, DC.
  • DC converter.
  • Avalanche Ratings 1 1 2, 4 2 3 2 3 1 1. Gate 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body.
  • drain diode reverse drain current Avalanch.

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www.DataSheet4U.com 2SJ280 L , 2SJ280 S Silicon P Channel MOS FET Application LDPAK High speed power switching 4 4 Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC converter • Avalanche Ratings 1 1 2, 4 2 3 2 3 1 1. Gate 2. Drain 3. Source 4.