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2SJ297L - Silicon P-Channel MOS FET

Download the 2SJ297L datasheet PDF. This datasheet also covers the 2SJ297 variant, as both devices belong to the same silicon p-channel mos fet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low on-resistance.
  • High speed switching.
  • Low drive current.
  • 4 V gate drive device can be driven from 5 V source.
  • Suitable for switching regulator, DC-DC converter.
  • Avalanche ratings Outline LDPAK 4 123 D G S 4 12 3 1. Gate 2. Drain 3. Source 4. Drain November 1996 2SJ297(L), 2SJ297(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse d.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SJ297-Hitachi.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2SJ290 SILICON P-CHANNEL MOSFET Hitachi Semiconductor
2SJ291 Silicon P-Channel MOS FET Hitachi Semiconductor
2SJ200 P-Channel MOSFET Toshiba Semiconductor
2SJ201 P-Channel MOSFET Toshiba Semiconductor
2SJ202 P-Channel MOSFET NEC

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SJ297 Silicon P-Channel MOS FET
2SJ297S Silicon P-Channel MOS FET
2SJ293 Silicon P-Channel MOSFET
2SJ296 Silicon P-Channel MOSFET
2SJ220 Silicon P-Channel MOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SJ297(L), 2SJ297(S) Silicon P-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter • Avalanche ratings Outline LDPAK 4 123 D G S 4 12 3 1. Gate 2. Drain 3. Source 4. Drain November 1996 2SJ297(L), 2SJ297(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C 3.