Part 2SJ291
Description Silicon P-Channel MOS FET
Manufacturer Hitachi Semiconductor
Size 80.32 KB
Hitachi Semiconductor
2SJ291

Overview

  • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline TO-220AB
  • G 1 2 3
  • Drain (Flange)
  • Source S 2SJ291