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2SJ291 Datasheet Silicon P-channel Mos Fet

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SJ291 Silicon P-Channel MOS FET November 1996 .. Application High speed power.

Key Features

  • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SJ291 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current www. DataSheet4U. com.

More Datasheets from Hitachi Semiconductor (now Renesas)

Part Number Description
2SJ290 SILICON P-CHANNEL MOSFET
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