Datasheet Summary
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2SJ296(L), 2SJ296(S)
Silicon P-Channel MOS FET
November 1996 Application
High speed power switching
Features
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- - Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings
Outline
LDPAK 4 4
1 2 1 D G 2 3
1. Gate 2. Drain 3. Source 4. Drain
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2SJ296(L),...