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2SJ296 - Silicon P-Channel MOSFET

Key Features

  • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain www. DataSheet4U. com 2SJ296(L), 2SJ296(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode r.

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Part Number Description
2SJ293 Silicon P-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com 2SJ296(L), 2SJ296(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain www.DataSheet4U.com 2SJ296(L), 2SJ296(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C 3.