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2SJ293 Datasheet Silicon P-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SJ293 Silicon P-Channel MOS FET Application High speed power.

Key Features

  • Low on-resistance.
  • High speed switching.
  • Low drive current.
  • 4 V gate drive device can be driven from 5 V source.
  • Suitable for switching regulator, DC-DC converter.
  • Avalanche ratings Outline TO-220FM D 12 3 1. Gate G 2. Drain 3. Source S November 1996 2SJ293 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current A.

More Datasheets from Hitachi Semiconductor (now Renesas)

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2SJ293 Distributor