Hitachi 2SJ297S
Silicon P-Channel MOS FET
| Part No. | 2SJ297S |
|---|---|
| Datasheet | 2SJ297S Download |
| Manufacturer |  Hitachi |
| Description | Silicon P-Channel MOS FET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance● High speed switching
● Low drive current
● 4 V gate drive device can be driven from 5 V source
● Suitable for switching regulator, DC-DC converter
● Avalanche ratings Outline LDPAK 4 123 D G S 4 12 3 1. Gate 2. Drain 3. Source 4. Drain November 1996 2SJ297(L), 2SJ297(S)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I *1 D(pulse) IDR IAP*3 EAR*3 Pch*2 Tch Tstg Ratings –60 ±20 –20 –80 –20 –20 34 60 150 –55 to +150 Unit V V A A A A mJ W °C °C 2 2SJ297(L), 2SJ297(S)ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS –60 Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current...
