Part 2SJ297
Description Silicon P-Channel MOS FET
Manufacturer Hitachi Semiconductor
Size 23.48 KB
Hitachi Semiconductor
2SJ297

Overview

  • Low on-resistance
  • High speed switching
  • Low drive current
  • 4 V gate drive device can be driven from 5 V source
  • Suitable for switching regulator, DC-DC converter
  • Avalanche ratings Outline LDPAK 4 123
  • G S 4 12 3
  • Drain
  • Source
  • Drain November 1996