2SJ363 Datasheet | Hitachi Semiconductor

Features - Low on-resistance - Low drive current - 4 V gate drive device can be driven from 5 V source Outline UPAK 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Ratings - 30 ±20 - 2 - 4 - 2 1 150 - 55 to +150 Unit V V A A A W °C °C Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10% 2. Value on the alumina ceramic board (12.5×20×0.7 mm) 3. Marking is “PY”. Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS - 30 ±20 - - - 1.0 - - |yfs| Ciss Coss Crss t d(on) tr t d(off) tf 1.4 - - - - - - - Typ - - - - - 0.6 0.35 2.0 2.1 100 0.25 1.65 8 25.9 14.9 Max - - ±5 - 1 - 2.0 0.75 0.45 - - - - - - - - Unit V V µA µA V Ω Ω S p F p F p F µs µs µs µs I D = - 1 A, VGS = - 10 V, RL = 30 Ω Test conditions I D = - 10 m A, VGS = 0 I G = ±10 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS...