2SJ399 Datasheet | Hitachi Semiconductor

Features - - - - - Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source Suitable for low signal load switch. Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10% 2. Marking is “ZF- ” Symbol VDSS VGSS ID I D(pulse)- I DR Pch Tch Tstg Ratings - 30 ±20 - 0.2 - 0.4 - 0.2 150 150 - 55 to +150 Unit V V A A A m W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min - 30 ±20 - - - 1.0 - - Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Ciss Coss Crss t d(on) tr t d(off) tf - - - - - - - Typ - - - - - 2.7 2.0 1.1 22.3 0.17 530 2170 7640 7690 Max - - ±2 - 1 - 2.0 5.0 3.0 - - - - - - - Unit V V µA µA V Ω Ω p F p F p F ns ns ns ns Test conditions I D = - 100 µA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = - 30 V, VGS = 0 I D = - 10 µA, VDS...