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2SJ399
Silicon P-Channel MOS FET
REJ03G0193-0200Z (Previous ADE-208-267 (Z) ) Rev.2.00 Apr.05.2004
Application
Low frequency power switching
Features
• • • • • Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source Suitable for low signal load switch.
Outline
MPAK
3 1 2 D 1. Source 2. Gate 3. Drain
G
S
Note:
Marking is “ZF–”
Rev.2.00, Apr.05.2004, page 1 of 5
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