| Part Number | 2SJ399 |
|---|---|
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SJ399
Silicon P-Channel MOS FET
ADE-208-267 1st. Edition
Application
Low frequency power switching
Features
• • • • • Low on-resistance Small package Low drive current 4 V gate drive device can be.
* * * * * Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source Suitable for low signal load switch. Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G S 2SJ399 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source volta. |
2SJ399 Datasheet
The 2SJ399 is a P-Channel MOSFET.
| Part Number | 2SJ399 |
|---|---|
| Description | Silicon P-Channel MOSFET |
| Manufacturer | Renesas |
| Overview |
2SJ399
Silicon P-Channel MOS FET
REJ03G0193-0200Z (Previous ADE-208-267 (Z) ) Rev.2.00 Apr.05.2004
Application
Low frequency power switching
Features
• • • • • Low on-resistance Small package Low dr.
* * * * * Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source Suitable for low signal load switch. Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G S Note: Marking is “ZF *” Rev.2.00, Apr.05.2004, page 1 of 5 Free Datasheet http://www.datashe. |