Datasheet4U Logo Datasheet4U.com

2SJ399 - P-Channel MOSFET

Key Features

  • Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source Suitable for low signal load switch. Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G S 2SJ399 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 100 µs,.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SJ399 Silicon P-Channel MOSFET Renesas
2SJ302 P-Channel MOSFET NEC
2SJ302-Z SWITCHING P-CHANNEL POWER MOSFET NEC
2SJ302-ZJ P-Channel MOSFET Kexin
2SJ303 P-Channel MOSFET NEC

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SJ317 P-Channel MOSFET
2SJ319 P-Channel MOSFET
2SJ319L P-Channel MOSFET
2SJ319S P-Channel MOSFET
2SJ350 P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SJ399 Silicon P-Channel MOS FET ADE-208-267 1st. Edition Application Low frequency power switching Features • • • • • Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source Suitable for low signal load switch. Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G S 2SJ399 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10% 2. Marking is “ZF–” Symbol VDSS VGSS ID I D(pulse)* I DR Pch Tch Tstg 1 Ratings –30 ±20 –0.2 –0.4 –0.