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2SJ399 Datasheet P-Channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SJ399 Silicon P-Channel MOS FET ADE-208-267 1st. Edition Application Low frequency power.

Key Features

  • Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source Suitable for low signal load switch. Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G S 2SJ399 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 100 µs,.