2SJ450 Datasheet | Hitachi Semiconductor

Features - - - - Low on-resistance. Low drive power High speed switching 2.5 V gate drive device. Outline UPAK 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Drain peak current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Ratings - 60 ±20 - 1 - 2 - 1 1 150 - 55 to +150 Unit V V A A A W °C °C Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10% 2. When using aluminium ceramic board (12.5 × 20 × 70 mm) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Symbol V(BR)DSS V(BR)GSS Min - 60 ±20 - - - 0.5 - - 0.6 - - - - - - - - - Typ - - - - - 0.85 1.1 1.0 150 72 24 6 9 50 35 - 0.9 100 Max - - - 50 ±10 - 1.5 1.2 1.9 - - - - - - - - - - Unit V V µA µA V Ω Ω S p F p F p F ns ns ns ns V ns I F = - 1 A, VGS = 0 I F...