Datasheet4U Logo Datasheet4U.com

2SJ451 - P-Channel MOSFET

Key Features

  • Low on-resistance. Low drive power 2.5 V gate drive device. Small package (MPAK). Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G S 2SJ451 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% Marking is "ZK.
  • ". Symbol VDSS VGSS ID I D(pulse).
  • Pch Tch Tstg 1 Ratings.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SJ456 P-Channel MOSFET Sanyo Semicon Device
2SJ459 P-Channel MOSFET Sanyo Semicon Device
2SJ400 P-Channel MOSFET Sanyo Semicon Device
2SJ401 P-Channel MOSFET Toshiba Semiconductor
2SJ402 P-Channel MOSFET Toshiba Semiconductor

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SJ450 P-Channel MOSFET
2SJ452 P-Channel MOSFET
2SJ409 P-Channel MOSFET
2SJ409L P-Channel MOSFET
2SJ409S P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SJ451 Silicon P-Channel MOS FET ADE-208-382 1st. Edition Application Low frequency power switching Features • • • • Low on-resistance. Low drive power 2.5 V gate drive device. Small package (MPAK). Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G S 2SJ451 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% Marking is "ZK–". Symbol VDSS VGSS ID I D(pulse)* Pch Tch Tstg 1 Ratings –20 ±20 –0.2 –0.4 150 150 –55 to +150 Unit V V A A mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Symbol V(BR)DSS V(BR)GSS Min –20 ±20 — — –0.5 — — 0.