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Ordering number : ENN5442A
2SJ456
P-Channel Silicon MOSFET
2SJ456
Ultrahigh-Speed Switching Applications
Features
• • •
Package Dimensions
unit : mm 2128
[2SJ456]
8.2 7.8 6.2 3
8.4 10.0 0.4 0.2
Low ON-resistance. High-speed diode incorporated. Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the surface mountable package.
0.6
4.2
1.2
1.0 2.54
1
2
1.0 2.54
6.2 5.2
0.3 0.6 7.8
5.08 10.0 6.0
0.7
1 : Gate 2 : Source 3 : Drain SANYO : ZP
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg
Conditions
2.
2SJ456 Datasheet
