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2SJ450 - P-Channel MOSFET

Key Features

  • Low on-resistance. Low drive power High speed switching 2.5 V gate drive device. Outline UPAK 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 G 2SJ450 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Drain peak current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse).
  • I DR Pch.
  • Tch Tstg 2 1 Ratings.
  • 60 ±20.
  • 1.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SJ450 Silicon P-Channel MOS FET ADE-208-381 1st. Edition Application High speed power switching Features • • • • Low on-resistance. Low drive power High speed switching 2.5 V gate drive device. Outline UPAK 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 G 2SJ450 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Drain peak current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings –60 ±20 –1 –2 –1 1 150 –55 to +150 Unit V V A A A W °C °C Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10% 2. When using aluminium ceramic board (12.