2SJ484 Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS(on) = 0.18 Ω typ. (at V GS = - 10V, ID = - 1A) - Low drive current - High speed switching - 4V gate drive devices. Outline UPAK 2 3 1 4 D 1. Gate 2. Drain 3. Source 4. Drain Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Ratings - 30 ±20 - 2 - 4 - 2 1 150 - 55 to +150 Unit V V A A A W °C °C Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10 % 2. When using aluminium ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min - 30 ±20 - - - 1.0 - - 1.2 - - - - - - - - - Typ - - - - - 0.18 0.3 2.0 230 140 50 10 30 35 30 - 0.95 60 Max - - - 10...