2SJ486 Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS(on) = 0.5 Ω typ. (at V GS = - 4V, ID = - 100 m A) - 2.5V gate drive devices. - Small package (MPAK). Outline MPAK 3 1 1. Source 2. Gate 3. Drain Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % Symbol VDSS VGSS ID I D(pulse)- Pch Tch Tstg Ratings - 30 ±10 - 0.3 - 0.6 150 150 - 55 to +150 Unit V V A A m W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min - 30 ±10 - - - 0.5 - Typ - - - - - 0.5 Max - - - 1.0 ±5.0 - 1.5 0.65 Unit V V µA µA V Ω Ω S Test Conditions I D = - 10µA, VGS = 0 I G = ±100µA, VDS = 0 VDS = - 30 V, VGS = 0 VGS = ±6.5V, VDS = 0 I D = - 10µA, VDS = - 5V I D = - 100m A VGS = - 4V- 1 - 0.7 1.2 I D = - 40m A VGS...