2SJ496 Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS(on) = 0.12Ω typ. (at VGS = - 10 V, I D = - 2.5 A) - 4V gate drive devices. - Large current capacitance ID = - 5 A Outline TO-92 Mod 1 1. Source 2. Drain 3. Gate Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Ta = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)- I DR I AP - 3 3 2 1 Ratings - 60 ±20 - 5 - 20 - 5 - 5 2.14 0.9 150 - 55 to +150 Unit V V A A A A m J W °C °C EAR- Pch- Tch Tstg Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min - 60 ±20 - - - 1.0 - - 3 - - - - - - - - - Typ - - - - - 0.12 0.17 5 600 290 80 10 25 95 55 - 1.0 65 Max - -...