Datasheet4U Logo Datasheet4U.com

2SJ410 - P-Channel MOSFET

Key Features

  • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter and motor driver Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SJ410 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SJ411 P-Channel MOSFET NEC
2SJ412 P-Channel MOSFET Toshiba Semiconductor
2SJ413 P-Channel MOSFET Sanyo Semicon Device
2SJ416 P-Channel MOSFET Sanyo Semicon Device
2SJ417 P-Channel MOSFET Sanyo Semicon Device

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SJ409 P-Channel MOSFET
2SJ409L P-Channel MOSFET
2SJ409S P-Channel MOSFET
2SJ450 P-Channel MOSFET
2SJ451 P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SJ410 Silicon P-Channel MOS FET ADE-208-539 1st. Edition Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter and motor driver Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SJ410 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.