Download 2SJ505 Datasheet PDF
Hitachi Semiconductor
2SJ505
2SJ505 is P-Channel MOSFET manufactured by Hitachi Semiconductor.
Features - Low on-resistance R DS(on) = 0.017Ω typ. - Low drive current. - 4V gate drive devices. - High speed switching. Outline LDPAK 4 D 1 G 1 4 1. Gate 2. Drain 3. Source 4. Drain 2SJ505(L), 2SJ505(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)- I DR I AP - 3 3 2 1 Ratings - 60 ±20 - 50 - 200 - 50 - 50 214 75 150 - 55 to +150 Unit V V A A A A m J W °C °C EAR- Pch- Tch Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Ta = 25°C, Rg ≥ 50 Ω, L=100µH 2SJ505(L), 2SJ505(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min - 60 ±20 - - - 1.0 - - 27 - - - - - -...