2SJ526
2SJ526 is Silicon P-Channel MOSFET manufactured by Hitachi Semiconductor.
Features
- Low on-resistance R DS(on) = 0.11 Ω typ.
- Low drive current
- 4 V gete drive devices
- High speed switching
Outline
TO- 220FM
1 2 S
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note3 Note3 Note2 Note1
Ratings
- 60 ±20
- 12
- 48
- 12
- 12 12 25 150
- 55 to +150
Unit V V A A A A m J W °C °C
Pch Tch
Tstg
1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
Item Symbol Min
- 60 ±20
- -
- 1.0
- - 5
- -
- -
- -
- -
- Typ
- -
- -
- 0.11 0.16 8 580 300 85 10 55 85...
