2SJ546
2SJ546 is Silicon P-Channel MOSFET manufactured by Hitachi Semiconductor.
Features
- Low on-resistance R DS(on) = 0.075 Ω typ.
- Low drive current.
- 4V gate drive devices.
- High speed switching.
Outline
TO- 220CFM
G 1 2
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)
Note1
Ratings
- 60 ±20
- 15
- 60
- 15
Unit V V A A A A m J W °C °C
Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP
Note3 Note3 Note2
- 15 19 30 150
- 55 to +150
Pch Tch
Tstg
1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C 3. Value at Tch = 25° C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
Item Symbol Min
- 60 ±20
- -
- 1.0
- - 6.5
- -
- -
- -
- -
- Typ
- -...
