2SJ555
2SJ555 is Silicon P-Channel MOSFET manufactured by Hitachi Semiconductor.
Features
- Low on-resistance R DS(on) = 0.017 Ω typ.
- Low drive current.
- 4V gate drive devices.
- High speed switching.
Outline
TO- 3P
1. Gate 2. Drain (Flange) 3. Source
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)
Note1
Ratings
- 60 ±20
- 60
- 240
- 60
Unit V V A A A A m J W °C °C
Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP
Note3 Note3 Note2
- 60 308 125 150
- 55 to +150
Pch Tch
Tstg
1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C 3. Value at Tch = 25° C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
Item Symbol Min
- 60 ±20
- -
- 1.0
- - 27
- -
- -
- -
- -
- Typ
- -
- -...
