2SJ555
Description
High speed power switching.
Key Features
- Low on-resistance RDS (on) = 0.017 Ω typ
- Low drive current
- 4 V gate drive devices
- Drain (Flange)
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SJ555 | Hitachi Semiconductor | Silicon P-Channel MOSFET |
| 2SJ557 | NEC | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |