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2SJ555
Silicon P Channel MOS FET
Description
High speed power switching
Features
• Low on-resistance RDS (on) = 0.017 Ω typ.
• Low drive current. • 4 V gate drive devices. • High speed switching.
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
1 2 3
G
D S
REJ03G0902-0300 (Previous: ADE-208-634A)
Rev.3.00 Sep 07, 2005
1. Gate 2. Drain (Flange) 3. Source
Rev.3.00 Sep 07, 2005 page 1 of 7
2SJ555
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C 3.
2SJ555 Datasheet
