NEC 2SJ557
The 2SJ557 is a switching device which can be driven directly by a 4 V power source. The 2SJ557 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.| Part No. | 2SJ557 |
|---|---|
| Datasheet | 2SJ557 Download |
| Manufacturer |  NEC |
| Description | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| Buy | Stock & Price |
DESCRIPTION
PACKAGE DRAWING (Unit : mm) 0.4 +0.1 –0.05 0.16+0.1 –0.06 0.65–0.15 +0.1 2.8 ±0.2 3 1.5 0 to 0.1 1 2FEATURES
● Can be driven by a 4 V power source● Low on-state resistance RDS(on)1 = 155 mΩ MAX. (VGS = –10 V, ID = –1.0 A) RDS(on)2 = 255 mΩ MAX. (VGS = –4.5 V, ID = –1.0 A) RDS(on)3 = 290 mΩ MAX. (VGS = –4.0 V, ID = –1.0 A) 0.95 0.95 0.65 0.9 to 1.1 1.9 2.9 ±0.2 1 : Gate 2 : Source 3 : Drain ORDERING INFORMATION PART NUMBER 2SJ557 PACKAGE 3-pin Mini Mold (Thin Type) EQUIVALENT CIRCUIT Drain
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 Note2 –30 –20 / +5 ±2.5 ±10 0.2 1.25 150 –55 to +150 V V A A W W °C °C Gate Gate Protection Diode Marking: XB Body Diode Source Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on FR4 Board, t ≤ 5 sec. Remark PT2 Tch Tstg The diode connected between the gate and source of the transistor serves as a protector against ESD.
