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2SJ557 - P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

General Description

The 2SJ557 is a switching device which can be driven directly by a 4 V power source.

Key Features

  • a low on-state resistance and excellent switching characteristics, and is suitable for.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ557 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SJ557 is a switching device which can be driven directly by a 4 V power source. The 2SJ557 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. PACKAGE DRAWING (Unit : mm) 0.4 +0.1 –0.05 0.16+0.1 –0.06 0.65–0.15 +0.1 2.8 ±0.2 3 1.5 0 to 0.1 1 2 FEATURES • Can be driven by a 4 V power source • Low on-state resistance RDS(on)1 = 155 mΩ MAX. (VGS = –10 V, ID = –1.0 A) RDS(on)2 = 255 mΩ MAX. (VGS = –4.5 V, ID = –1.0 A) RDS(on)3 = 290 mΩ MAX. (VGS = –4.0 V, ID = –1.0 A) 0.95 0.95 0.65 0.9 to 1.1 1.9 2.9 ±0.