NEC 2SJ559
The 2SJ559 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ559 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits.| Part No. | 2SJ559 |
|---|---|
| Datasheet | 2SJ559 Download |
| Manufacturer |  NEC |
| Description | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| Buy | Stock & Price |
DESCRIPTION
PACKAGE DRAWING (Unit : mm) 0.3 ± 0.05 0.1 +0.1 –0.05 1.6 ± 0.1 0.8 ± 0.1 D 0 to 0.1 G 0.2 +0.1 –0 0.5 0.5 0.6 0.75 ± 0.05 SFEATURES
● Can be driven by a 2.5 V power source.● Low gate cut-off voltage. 1.0 1.6 ± 0.1
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note1 Note2 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg –30 V V A A mW °C °C EQUIVALENT CIRCUIT Drain # 20 # 0.1 # 0.4 200 150 –55 to +150 Total Power Dissipation Channel Temperature Storage Temperature Gate Gate Protect Diode Source Internal Diode Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2 2. Mounted on ceramic substrate of 3.0cm Remark × 0.64 mm Marking : C1 The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice.
