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2SJ559 - P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

General Description

The 2SJ559 is a switching device which can be driven directly by a 2.5 V power source.

The 2SJ559 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits.

0.8 ± 0.

Key Features

  • Can be driven by a 2.5 V power source.
  • Low gate cut-off voltage. 1.0 1.6 ± 0.1.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ559 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ559 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ559 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. PACKAGE DRAWING (Unit : mm) 0.3 ± 0.05 0.1 +0.1 –0.05 1.6 ± 0.1 0.8 ± 0.1 D 0 to 0.1 G 0.2 +0.1 –0 0.5 0.5 0.6 0.75 ± 0.05 S FEATURES • Can be driven by a 2.5 V power source. • Low gate cut-off voltage. 1.0 1.6 ± 0.