Datasheet4U.com

2SJ551S Datasheet Silicon P-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SJ551(L),2SJ551(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-647B (Z) 3rd.

2SJ551S datasheet preview

Datasheet Details

Part number	2SJ551S
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	55.76 KB
Description	Silicon P-Channel MOSFET
Datasheet	2SJ551S_HitachiSemiconductor.pdf

Key Features

Low on-resistance R DS(on) = 0.050 Ω typ.
Low drive current.
4V gate drive devices.
High speed switching. Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ551(L),2SJ551(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings.
60 ±20.
18.
72.
18 Unit V V A A A A mJ W °C °C Bo.

Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	2SJ551S	P-Channel MOSFET	Renesas
	2SJ551	P-Channel MOSFET	Renesas
	2SJ551L	P-Channel MOSFET	Renesas

More Datasheets from Hitachi Semiconductor (now Renesas)

Part Number	Description
2SJ551	Silicon P-Channel MOSFET
2SJ551L	Silicon P-Channel MOSFET
2SJ550	Silicon P-Channel MOSFET
2SJ550L	Silicon P-Channel MOSFET
2SJ550S	Silicon P-Channel MOSFET
2SJ552	Silicon P-Channel MOSFET
2SJ552L	Silicon P-Channel MOSFET
2SJ552S	Silicon P-Channel MOSFET
2SJ553	Silicon P-Channel MOSFET
2SJ553L	Silicon P-Channel MOSFET

2SJ551S Distributor