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2SJ554 - Silicon P-Channel MOSFET

Features

  • Low on-resistance R DS(on) = 0.028 Ω typ.
  • Low drive current.
  • 4V gate drive devices.
  • High speed switching. Outline TO.
  • 3P D G 1 S 2 3 2SJ554 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings.
  • 60 ±20.
  • 45.
  • 180.
  • 45 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalanche c.

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Full PDF Text Transcription

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2SJ554 Silicon P Channel MOS FET High Speed Power Switching ADE-208-628B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.028 Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–3P D G 1 S 2 3 2SJ554 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –45 –180 –45 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –45 173 100 150 –55 to +150 EAR Pch Tch Tstg 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C 3.
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