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2SJ550S - Silicon P-Channel MOSFET

Key Features

  • Low on-resistance R DS(on) = 0.075 Ω typ.
  • Low drive current.
  • 4V gate drive devices.
  • High speed switching. Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ550(L),2SJ550(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings.
  • 60 ±20.
  • 15.
  • 60.
  • 15 Unit V V A A A A mJ W °C °C Bo.

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📁 Similar Datasheet

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Other Datasheets by Hitachi Semiconductor (now Renesas)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SJ550(L),2SJ550(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-633A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.075 Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ550(L),2SJ550(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –15 –60 –15 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –15 19 50 150 –55 to +150 EAR Pch Tch Tstg 1.