2SJ574 Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS = 1.1 Ω typ. (VGS = -10 V , I D = -150 m A) R DS = 2.2 Ω typ. (VGS = -4 V , I D = -150 m A) - 4 V gate drive device. - Small package (MPAK) Outline MPAK 3 1 D 3 2 G 1. Source 2. Gate 3. Drain S 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note 2 Note1 Ratings -30 ±20 -300 -1.2 -300 400 150 - 55 to +150 Unit V V m A A m A m W °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value on the alumina ceramic board (12.5x20x0.7mm) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min -30 ±20 - - -1.3 - - 195 - - - - - - - Typ - - - - - 1.1 2.2 300 50 40 15 20 50 110 105 Max - - ±5 -1 -2.3 1.3 3.1 - - - - - - - - Unit V V µA µA V Ω Ω m S p F p F p F ns ns ns ns Test Conditions I D = -100 µA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = -30 V, VGS = 0 I D = -10µA, VDS = -5 V ID = -150 m A,VGS = -10 V Note 3 Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) |yfs| Ciss Coss ID = -150 m A,VGS = -4 V Note 3 ID = -150 m A, VDS = -10 V Note 3 VDS = -10 V VGS = 0 f = 1 MHz I D = -150 m A, VGS = -10 V RL = 66.6...