Datasheet Summary
Silicon P Channel MOS FET High Speed Switching
Features
- Low on-resistance RDS = 1.1 Ω typ. (VGS =
- 10 V, ID =
- 150 mA) RDS = 2.2 Ω typ. (VGS =
- 4 V, ID =
- 150 mA)
- 4 V gate drive device.
- Small package (MPAK)
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
Note: Marking is BP
3 G
1 2
Preliminary Datasheet
R07DS0574EJ0500 Rev.5.00
Jan 10, 2014
D 1. Source 2. Gate 3....
