2SJ574 Overview
Key Features
- Low on-resistance RDS = 1.1 Ω typ. (VGS = –10 V, ID = –150 mA) RDS = 2.2 Ω typ. (VGS = –4 V, ID = –150 mA)
- 4 V gate drive device
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SJ574 | Hitachi Semiconductor | Silicon P-Channel MOSFET |
| 2SJ576 | Hitachi Semiconductor | Silicon P Channel MOS FET High Speed Switching |
| 2SJ575 | Hitachi Semiconductor | Silicon P Channel MOS FET High Speed Switching |
| 2SJ578 | SANYO | Ultrahigh-Speed Switching Applications |
| 2SJ579 | SANYO | Ultrahigh-Speed Switching Applications |