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2SJ574 Datasheet Silicon P-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SJ574 Silicon P Channel MOS FET High Speed Switching ADE-208-739B (Z) 3rd.Edition.

Key Features

  • Low on-resistance R DS = 1.1 Ω typ. (VGS = -10 V , I D = -150 mA) R DS = 2.2 Ω typ. (VGS = -4 V , I D = -150 mA).
  • 4 V gate drive device.
  • Small package (MPAK) Outline MPAK 3 1 D 3 2 2 G 1. Source 2. Gate 3. Drain S 1 2SJ574 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGS.

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