Datasheet Summary
Silicon P Channel MOS FET High Speed Switching
ADE-208-739B (Z) 3rd.Edition. June 1999 Features
- Low on-resistance R DS = 1.1 Ω typ. (VGS = -10 V , I D = -150 mA) R DS = 2.2 Ω typ. (VGS = -4 V , I D = -150 mA)
- 4 V gate drive device.
- Small package (MPAK)
Outline
MPAK
3 1
D 3
2 G
1. Source 2. Gate 3. Drain
S...
