| Part Number | 2SJ574 Datasheet |
|---|---|
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SJ574
Silicon P Channel MOS FET High Speed Switching
ADE-208-739B (Z) 3rd.Edition. June 1999 Features
• Low on-resistance R DS = 1.1 Ω typ. (VGS = -10 V , I D = -150 mA) R DS = 2.2 Ω typ. (VGS = -4 .
* Low on-resistance R DS = 1.1 Ω typ. (VGS = -10 V , I D = -150 mA) R DS = 2.2 Ω typ. (VGS = -4 V , I D = -150 mA) * 4 V gate drive device. * Small package (MPAK) Outline MPAK 3 1 D 3 2 2 G 1. Source 2. Gate 3. Drain S 1 2SJ574 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage . |
2SJ574 Datasheet and Specifications PDF
The 2SJ574 is a Silicon P-Channel MOSFET.
Key Specifications
| Mount Type | Surface Mount |
|---|---|
| Pins | 3 |
| Height | 1.3 mm |
| Length | 2 mm |
| Width | 3 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | 2SJ574 Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | Renesas |
| Overview |
2SJ574
Silicon P Channel MOS FET High Speed Switching
Features
• Low on-resistance RDS = 1.1 Ω typ. (VGS = –10 V, ID = –150 mA) RDS = 2.2 Ω typ. (VGS = –4 V, ID = –150 mA)
• 4 V gate drive device. • S.
* Low on-resistance RDS = 1.1 Ω typ. (VGS = *10 V, ID = *150 mA) RDS = 2.2 Ω typ. (VGS = *4 V, ID = *150 mA) * 4 V gate drive device. * Small package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) Note: Marking is BP 3 G 1 2 Preliminary Datasheet R07DS0574EJ0500 Rev.5.00 J. |