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2SJ578 - Ultrahigh-Speed Switching Applications

Features

  • Low ON resistance.
  • Ultrahigh-speed switching.
  • 4V drive. Package Dimensions unit:mm 2062A [2SJ578] 4.5 1.6 1.5 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% 1 : Gate 2 : Drain 3 : Source SANYO : P.

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Full PDF Text Transcription

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Ordering number:ENN6408 P-Channel Silicon MOSFET 2SJ578 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2062A [2SJ578] 4.5 1.6 1.5 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% 1 : Gate 2 : Drain 3 : Source SANYO : PCP Conditions Ratings –60 ±20 –1 –4 1.3 3.5 150 –55 to +150 Unit V V A A W W ˚C ˚C Mounted on a ceramic board (250mm2× 0.
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