2SJ576 Overview
Key Features
- Low on-resistance R DS =2.8 Ω typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 Ω typ. (V GS = -4 V , ID = -50 mA)
- 4 V gate drive device
- Small package (CMPAK) Outline CMPAK 3 1 2 D 3 2 G
- Drain S 1 2SJ576
| Part | 2SJ576 |
|---|---|
| Description | Silicon P Channel MOS FET High Speed Switching |
| Manufacturer | Hitachi Semiconductor |
| Size | 27.12 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SJ578 | SANYO | Ultrahigh-Speed Switching Applications |
| 2SJ579 | SANYO | Ultrahigh-Speed Switching Applications |
| 2SJ574 | Renesas | P-Channel MOSFET |